PART |
Description |
Maker |
HYMD532M646A6-H HYMD532M646A6-J HYMD532M646A6-K HY |
DDR SDRAM - SO DIMM 256MB 32M X 64 DDR DRAM MODULE, 0.7 ns, ZMA200 Unbuffered DDR SO-DIMM
|
HYNIX SEMICONDUCTOR INC
|
K4H560838F-UC/LA2 K4H561638F-UC/LA2 K4H560838F-UC/ |
256Mb F-die DDR SDRAM Specification 256Mb的的F - DDR SDRAM内存芯片规格
|
Samsung Semiconductor Co., Ltd.
|
HB54A2568FM-A75B HB54A2569FM-A75B HB54A2569FM-10B |
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184 256MB Unbuffered DDR SDRAM DIMM
|
ELPIDA MEMORY INC
|
HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT- |
DDR SDRAM - 256Mb 256M-P DDR SDRAM IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
|
Hynix Semiconductor http://
|
EBD52UC8AARA-7A EBD52UC8AARA-7B EBD25EC8AJFA EBD25 |
512MB DDR SDRAM SO DIMM 256MB Unbuffered DDR SDRAM DIMM 1GB Unbuffered DDR SDRAM DIMM 512MB Registered DDR SDRAM DIMM 256MB DDR SDRAM SO DIMM 512MB Unbuffered DDR SDRAM DIMM 1GB DDR SDRAM SO DIMM 1GB Registered DDR SDRAM DIMM 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
http:// ELPIDA MEMORY INC
|
W3EG6433S-JD3 W3EG6433S265D3 |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED 256MB 2x16Mx64 DDR内存缓冲
|
Electronic Theatre Controls, Inc.
|
HYMD232726B8J-J HYMD232726B8J-D43 HYMD232726B8JD4 |
32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
MT46V16M16CV-6ITK MT46V64M4 MT46V32M8 MT46V32M8P-5 |
256Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate (DDR) SDRAM
|
Micron Technology
|
HYMD232726CL8-H HYMD232726CL8-K HYMD232726CL8-L HY |
DDR SDRAM - Unbuffered DIMM 256MB 32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 Unbuffered DDR SDRAM DIMM
|
HYNIX SEMICONDUCTOR INC
|
HYMD232646A8J-D4 HYMD232646A8J-D43 HYMD232646A8J-J |
DDR SDRAM - Unbuffered DIMM 256MB 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor, Inc.
|
K4H561638D-GCB0 K4H561638D-GLB0 K4H561638D-GLB3 K4 |
DDR 256MB
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
NT256D64SH8B0GM |
256MB DDR SO-DIMM
|
Nanya Technology
|